HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C VDSS IXFR 30N50Q IXFR 32N50Q ID25 RDS(on) 0.
16 W 0.
15 W 500 V 29 A 500 V 30 A trr £ 250 ns Maximum Ratings 500 500 ±20 ±30 30N50 32N50 30N50 32...

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