HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits.
The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than.
address access time at read cycle.
The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology.
It is particularly well suited for use in high-density high-speed system applications FEATURES • • • • Single 3.
3V±0.
3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.
0V(min) –L-ver.
Only •...

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