|
Part Number
|
MTD2N40E |
|
Manufacturer
|
Motorola |
|
Description
|
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
|
Published
|
Oct 5, 2005 |
|
Detailed Description
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD2N40E/D
™ Data Sheet TMOS E-FET.™ High Energy Power F...
|
|
Datasheet
|
MTD2N40E
|
Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD2N40E/D
™ Data Sheet TMOS E-FET.
™ High Energy Power FET DPAK for Surface Mount
Designer's
MTD2N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently.
This new high energy device also offers a drain–to–soure diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer add...
Similar Datasheet