IRFR9220, IRFU9220
Data Sheet July 1999 File Number
4015.
3
3.
6A, 200V, 1.
500 Ohm, P-Channel Power MOSFETs
These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation.
These are P-Channel enhancement-mode silicon gate power fieldeffect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17502.
Features
• 3.
6A, 200V • rDS(ON) = 1.
500Ω • Tempera...