CEP04N6/CEB04N6
CEF04N6
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP04N6 CEB04N6 CEF04N6
VDSS 600V 600V
600V
RDS(ON) 2.
4Ω 2.
4Ω
2.
4Ω
ID 4.
2A 4.
2A 4.
2A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO...