Part Number
|
MB84VA2107 |
Manufacturer
|
Fujitsu Media Devices |
Description
|
(MB84VA2106 / MB84VA2107) 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM |
Published
|
Oct 18, 2005 |
Detailed Description
|
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50109-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (×16) FLASH MEMO...
|
Datasheet
|
MB84VA2107
|
Overview
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50109-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (×16) FLASH MEMORY & 1M (× 8) STATIC RAM
MB84VA2106-10/MB84VA2107-10
s FEATURES
• Power supply voltage of 2.
7 to 3.
6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words.
Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• Boot Code Sector Architecture MB84VA2106: Top sector MB84VA2107: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip...
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