Part Number
|
IRLMS2002 |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Oct 19, 2005 |
Detailed Description
|
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available i...
|
Datasheet
|
IRLMS2002
|
Overview
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.
5V Rated
D D G
1
6
A D
VDSS = 20V
2 5
D S
3
4
RDS(on) = 0.
030Ω
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board spac...
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