TK19H50C
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK19H50C
Switching
Regulator Applications
Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.
25Ω (typ.
) : |Yfs| = 14 S (typ.
) Unit: mm
: IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 19 76 150 968 19 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single-p...