|
Part Number
|
MBM200JS12AW |
|
Manufacturer
|
Hitachi |
|
Description
|
IGBT POWER MODULE |
|
Published
|
Nov 8, 2005 |
|
Detailed Description
|
IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low s...
|
|
Datasheet
|
MBM200JS12AW
|
Overview
IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage.
* low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
4- φ 6.
5
20
108 93 18
20
4-Fast-on Terminal #110
3-M6
C2E1
G2 E2
E1
E2
C1
G1
25
25 46
7 12 36
PDE-M200JS12AW-0
φ 0.
8
29 6.
5
C2E1
G2 E2 E2 C1 E1 G1
Weight: 470 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.
m (kgf.
cm)
MBM200JS12AW
1,200 ±20 200...
Similar Datasheet