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Part Number
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MBM200GS12AW |
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Manufacturer
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Hitachi |
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Description
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IGBT POWER MODULE |
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Published
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Nov 8, 2005 |
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Detailed Description
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IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High spe...
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Datasheet
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MBM200GS12AW
|
Overview
IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High speed and low saturation voltage.
* low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
3-M5 2- φ5.
6
16
16
G2
4-Fast-on Terminal #110
C1
E2
C2E1
E1 G1
23
23 39.
5 φ0.
8
7 12 30
C2E1 G2 E2 E2 C1 E1 G1
Weight: 265 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.
m (kgf.
cm)
MBM200GS12AW
1,200 ±20 200 400 200 (1) 400 1,000 -40 ~ +1...
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