STH10NA50/FI STW10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) 0.
8 Ω 0.
8 Ω 0.
8 Ω
ID 9.
6 A 5.
6 A 9.
6 A
TO-247
TYPICAL RDS(on) = 0.
7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
3 2 1
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching pe...