|
Part Number
|
STS2309A |
|
Manufacturer
|
SamHop Microelectronics |
|
Description
|
P -Channel Enhancement Mode Field Effect Transistor |
|
Published
|
Nov 14, 2005 |
|
Detailed Description
|
S amHop Microelectronics C orp.
S T S 2309A
Dec 22 2004
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R O...
|
|
Datasheet
|
STS2309A
|
Overview
S amHop Microelectronics C orp.
S T S 2309A
Dec 22 2004
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-2.
3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
130 @ V G S = -4.
5V 190@ V G S = -2.
5V
R ugged and reliable.
S OT-23 package.
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuousa @ Tc=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2.
3...
Similar Datasheet