SamHop Microelectronics Corp.
STS2320
Oct .
29 2004 V1.
1
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
20V
FEATURES
( m W ) Max
ID
3.
6A
RDS(ON)
Super high dense cell design for low RDS(ON).
45@ VGS = 4.
5V 65@ VGS =2.
5V
Rugged and reliable.
SOT-23 package.
D
SOT-23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range
a
Symbol VDS VGS ID IDM IS PD TJ, TSTG
Limit 20 10 3.
6 14 1.
25 1.
25 -55 to 150
Unit V V A A A W C
THERMAL CHARACTERIS...