Part Number
|
1N23WG |
Manufacturer
|
Advanced Semiconductor |
Description
|
SILICON MIXER DIODE |
Published
|
Nov 14, 2005 |
Detailed Description
|
1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating Fro...
|
Datasheet
|
1N23WG
|
Overview
1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.
0 to 12.
4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
• High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.
0 V 2.
0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
NF VSWR ZIF frange RL = 22 Ω
TC = 25 °C
TEST CONDITIONS
F = 9375 MHz RL = 100 Ω Plo = 1.
0 mW IF = 30 MHz NFif = 1.
5 dB
MINIMUM TYPICAL
MAXIM
6.
5 1.
3
UNITS
dB
f = 1000 Hz
335 8.
0
465 12.
4
Ω GHz
A D V A N C E D S E M I ...
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