CY7C286 64K x 8 Reprogrammable PROM Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active • • • • — 40 mA standby EPROM technology, 100%programmable 5V ±10% VCC, commercial and military TTL-compatible I/O Capable of withstanding 2001V static discharge in the active mode and 40 mA in the standby mode.
Access time is 45 ns.
The CY7C286 is available in a cerDIP package equipped with an erasure window to provide reprogrammability.
When exposed to UV light, the PROM is erased and can be reprogrammed.
The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
The CY7C28...

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