STK2N80
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE STK2N80
s s s s s s s
V DSS 800 V
R DS( on) 7Ω
ID 2.
1 A
TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION SOT-82
1
2
3
1
2
3
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING
SOT-194 (option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( •) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (contin...