Part Number
|
UPD444016L |
Manufacturer
|
NEC |
Description
|
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
Published
|
Dec 3, 2005 |
Detailed Description
|
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016L is...
|
Datasheet
|
UPD444016L
|
Overview
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.
3 V ± 0.
3 V.
The µPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
• 262,144 words by 16 bits organization • Fast access time : 8, 10, 12 ns (MAX.
) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Output Enable input for easy application • Single +3.
3 V power supply
Ordering Information
Part number Package Access time ns (MAX.
) Supply current mA (MAX.
) At operating 210 190 180 210 190 180 At standby 5
µPD444016L...
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