Part Number
|
KM718V887 |
Manufacturer
|
Samsung semiconductor |
Description
|
256Kx18 Synchronous SRAM |
Published
|
Dec 13, 2005 |
Detailed Description
|
KM718V887
Document Title
256Kx18-Bit Synchronous Burst SRAM
256Kx18 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1...
|
Datasheet
|
KM718V887
|
Overview
KM718V887
Document Title
256Kx18-Bit Synchronous Burst SRAM
256Kx18 Synchronous SRAM
Revision History
Rev.
No.
0.
0 0.
1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics.
Change ISB1 value from 10mA to 30mA.
Change ISB2 value from 10mA to 20mA.
Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIH max from 5.
5V to VDD+0.
5V Draft Date May.
15.
1997 February.
11.
1998 Remark Preliminary Preliminary
0.
2
April.
14.
1998
Preliminary
0.
3
May 13.
1998 Change ISB2 value from 20mA to 30mA.
Change VDD condition from VDD=3.
3V+10%/-5% to VDD=3.
...
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