SGR20N40L / SGU20N40L
August 2001
IGBT
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar
Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with
transistors having a planar gate structure.
They also have wide noise immunity.
These devices are very suitable for strobe applications
Features
• • • • • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L
Application
Strobe flash.
C
C
G
G E
D-PAK
GC E
I-PAK
E
Absolute Maximum Ratings
Symbol VCES VGES ICM (1) PC TJ Tstg TL
TC = 25°C unless otherwise noted
Description Collector - Emitt...