Power
Transistors
2SB1063
Silicon
PNP triple diffusion planar type
For high power amplification Complementary to 2SD1499 ■ Features
• Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3
Unit: mm
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2
4.
2±0.
2
4.
2±0.
2 2.
7±0.
2
7.
5±0.
2
φ 3.
1±0.
1
Solder Dip (4.
0)
1.
4±0.
1
1.
3±0.
2 0.
5+0.
2 –0.
1
14.
0±0.
5
0.
8±0.
1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr...