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Part Number
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MTP12N06EZL |
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Manufacturer
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Motorola |
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Description
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TMOS POWER FET |
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Published
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Dec 19, 2005 |
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Detailed Description
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP12N06EZL/D
™ Data Sheet TMOS E-FET.™ High Energy Powe...
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Datasheet
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MTP12N06EZL
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Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP12N06EZL/D
™ Data Sheet TMOS E-FET.
™ High Energy Power FET
Designer's
MTP12N06EZL
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a gate–to–source zener diode designed for 4 kV ESD protection (human body model).
• • • • • ESD Protected 4 kV Human Body Model 400 V Machine Model Avalanche Energy Capability Internal Source–To–Drain Diode Designed to Replace External Zener Transient Suppressor–Absorbs High Energy in the Avalanche Mode
G
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.
18...
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