MPSA43C

MPSA43 : MPSA43 MPSA43 NPN High Voltage Amplifier • This device is designed for application as a video output to drive color CRT and other high voltage applications. • Sourced from process 48. • See MPSA42 for characteristics. 1 TO-92 Absolute Maximum Ratings * TA=25°C unless otherwise noted 1. Emitter 2. Base 3. Collector Symbol Parameter Value Units VCES Collector-Emitter Voltage 200 VCBO Collector-Base Voltage 200 VEBO Emitter-Base Voltage 6.0 IC Collector Current - Continuous 200 TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. V V V mA °C .

MPSA43 : SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES ᴌComplementary to MPSA92/93. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage MPSA42 MPSA43 VCBO Collector-Emitter Voltage MPSA42 MPSA43 VCEO Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC IE PC Tj Tstg RATING 300 200 300 200 6.0 500 -500 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C MPSA42/43 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX.

MPSA43 : NPN Silicon High-Voltage Transistors q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: MPSA 92 MPSA 93 (PNP) MPSA 42 MPSA 43 321 Type MPSA 42 MPSA 43 Marking Ordering Code MPSA 42 MPSA 43 Q68000-A413 Q68000-A4809 Pin Configuration 123 EBC Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TC = 66 ˚C 2) Junction temperature Storage temperature range Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg MPSA 42 300 Values MPSA 43 200 300 200 6 500 100 625 150 – 65 + 150 Thermal Resistance Junction - ambient Junction - case 2) Rth JA Rth JC ≤ 2.

MPSA43 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Mechanical Data Case: TO-92, Molded Plastic Marking: MPSA42 ----A42 MPSA43 ----MPSA43 Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage MPSA42 MPSA43 VCEO Collector-Base Voltage MPSA42 MPSA43 VCBO Emitter-Base Voltage MPSA42 MPSA43 VEBO Value 300 200 300 200 5.0 .

MPSA43 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA42/D High Voltage Transistors NPN Silicon COLLECTOR 3 MPSA42 * MPSA43 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 300 200 300 200 6.0 6.0 500 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Un.

MPSA43 : SYMBOL MPSA42 MPSA43 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 300 200 300 200 6 500 625 5 1.5 12 -55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPSA42 Collector -Emitter Voltage VCEO IC=1mA,IB=0 300 Collector -Base Voltage VCBO IC=100uA.IE=0 300 Emitter-Base Voltage VEBO IE=10.

MPSA43 : High-Voltage NPN Transistors P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA43 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Value 200 200 6.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W °C °C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 160Vdc, IE=0) Emitter Cutoff Current (VEB= 4.0.

MPSA43 : MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Device Dissipation @ Ta=25℃ Derate above 25℃ Total Device Dissipation @ Tc=25℃ Derate above 25℃ Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC .

MPSA43 : The CENTRAL SEMICONDUCTOR MPSA42 and MPSA43 are silicon NPN transistors designed for high voltage applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=200V ICBO VCB=160V IEBO VEB=6.0V IEBO VEB=4.0V BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=100μA VCE(SAT) IC=20mA, IB=2.0mA VBE(SAT) IC=20mA, IB=2.0mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC.

MPSA43 : The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch.  FEATURES *Collector-Emitter voltage: VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MPSA42L-AB3-R MPSA42G-AB3-R SOT-89 MPSA42L-T60-K MPSA42G-T60-K TO-126 MPSA42L-T92-B MPSA42G-T92-B TO-92 MPSA42L-T92-K MPSA42G-T92-K TO-92 MPSA42L-T9N-B MPSA42G-T9N-B TO-92NL MPSA42L-T9N-K MPSA42G-T9N-K TO-92NL MPSA43L-AB3-R MPSA43G-AB3-R SOT-89 MPSA43L-T92-B MPSA43G-T92-B TO-92 MPSA43L-T92-K MPSA43G-T92-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emit.

MPSA43 : NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92. Fig.1 1 handbook, halfpage 2 3 MPSA42; MPSA43 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 1 2 3 MAM279 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME MPSA42 MPSA43 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO MPSA42 MPSA43 VCEO collector-emitter voltage MPSA42 MPSA43 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C open collector open.

MPSA43 : MPSA42, MPSA43 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ NPN Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets and in video output stages of TV receivers and monitors. ♦ As complementary types, the PNP transistors MPSA92 and MPSA93 are recommended max. ∅ .022 (0.55) .098 (2.5) E B C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current .

MPSA43 : SYMBOL MPSA42 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient VCEO VCBO VEBO IC PD PD Tj, Tstg 300 300 MPSA43 200 200 UNIT V V V mA mW mW./deg C W mW./deg C deg C 6 500 625 5 1.5 12 -55 to +150 Rth(j-c) Rth(j-a) 83.3 200 deg C/W deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPSA42 VCEO IC=1mA,IB=0 300 Collector -Emitter Voltage VCBO IC=100uA.IE=0 300 Collector -.

MPSA43 : MCC Micro Commercial Components MPSA42 TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA43 NPN Silicon High Voltage Transistor 625mW TO-92 THRU Features Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Mechanical Data Case: TO-92, Molded Plastic Marking: MPSA42 ----A42 MPSA43 ----MPSA43 A E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage MPSA42 VCEO MPSA43 Collector-Base Voltage MPSA42 VCBO MPSA4.

MPSA43 : MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA43 MPSA42 VCEO 200 300 Vdc Collector −Base Voltage MPSA43 MPSA42 VCBO 200 300 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 500 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resista.

MPSA43 : .

MPSA43 : MPSA42 MPSA43 VCEO Collector-Emitter Voltage 300 200 VCBO Collector-Base Voltage 300 200 VEBO Emitter-Base Voltage 6.0 IC Collector Current Continuous 500 Power Dissipation at TA=25°C PD Derate above 25°C 625 5.0 PD RθJA RθJC TJ ,TSTG Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range 1.5 12 200 83.3 -55 to +150 Unit V V V mA mW mW/° C W mW/° C ° C/W ° C/W °C TAITRON COMPONENTS INCORPORATED.