Transistors
MSG33001
SiGe HBT type
For low-noise RF amplifier
0.
33+0.
05 –0.
02 0.
10+0.
05 –0.
02
Unit: mm
■ Features
• Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.
8 mm × 1.
2 mm (height 0.
52 mm)
3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 0.
52±0.
03 0 to 0.
01 5˚ (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5˚ 0.
15 min.
0.
23+0.
05 –0.
02 1 2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VC...