Part Number
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FLM3135-4F |
Manufacturer
|
ETC |
Description
|
C-Band Internally Matched FET |
Published
|
Dec 29, 2005 |
Detailed Description
|
FLM3135-4F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB...
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Datasheet
|
FLM3135-4F
|
Overview
FLM3135-4F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 36.
5dBm (Typ.
) High Gain: G1dB = 12.
0dB (Typ.
) High PAE: ηadd = 38% (Typ.
) Low IM3 = -45dBc@Po = 25.
5dBm Broad Band: 3.
1 ~ 3.
5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel ...
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