MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18085B/D
The RF MOSFET Line
RF Power Field Effect
Transistors
Designed for GSM and GSM EDGE base station applications with frequencies from 1.
9 to 2.
0 GHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.
5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P...