MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MRF18060A RF Power Field Effect
Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET Line
applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Specified for GSM1805 – 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz) Power Gain — 13 dB (Typ) @ 60 Watts Efficiency — 45% (Typ) @ 60 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency...