IRL3705ZS

IRL3705Z : .

IRL3705Z : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL3705Z，IIRL3705Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 340 PD Total Dissipation @TC=25℃ 130 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL.

IRL3705ZL : .

IRL3705ZLPbF : This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 8.0mΩ S ID = 75A TO-220AB D2Pak TO-262 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Cont.

IRL3705ZPbF : This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 8.0mΩ S ID = 75A TO-220AB D2Pak TO-262 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Cont.

IRL3705ZS : Isc N-Channel MOSFET Transistor IRL3705ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 86 61 340 PD Total Dissipation @TC=25℃ 130 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha.

IRL3705ZSPbF : This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 8.0mΩ S ID = 75A TO-220AB D2Pak TO-262 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Cont.