Part Number
|
SSW1N60A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Jan 3, 2006 |
Detailed Description
|
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
|
Datasheet
|
SSW1N60A
|
Overview
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Low RDS(ON) : 9.
390 Ω (Typ.
)
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation ...
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