Part Number
|
MT58L512L18D |
Manufacturer
|
Micron Semiconductor |
Description
|
(MT58Lxxxx) 8Mb SYNCBURST SRAM |
Published
|
Jan 4, 2006 |
Detailed Description
|
™ t e 8Mb SYNCBURST e h SRAMS
4U
.
m o c
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
MT58L...
|
Datasheet
|
MT58L512L18D
|
Overview
™ t e 8Mb SYNCBURST e h SRAMS
4U
.
m o c
8Mb: 512K x 18, 256K x 32/36 3.
3V I/O, PIPELINED, DCD SYNCBURST SRAM
MT58L512L18D, MT58L256L32D, MT58L256L36D
3.
3V VDD, 3.
3V I/O, Pipelined, DoubleCycle Deselect
a D .
FEATURES w w w
• • • • • • • • • • • • • • •
ta
Fast clock and OE# access times Single +3.
3V +0.
3V/-0.
165V power supply (VDD) Separate +3.
3V isolated output buffer supply (VDDQ) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled and registered addresses, data I/Os and control signals Internally self-timed WRITE cycle Burst co...
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