MX28F2000P 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase • Optimized high density blocked architecture – Four 4-KB blocks (Top) – Fourteen 16-KB blocks – Four 4-KB blocks (Bottom) • Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit • 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Advanced CMO...

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