DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA679TB
N/P-CHANNEL MOS FIELD EFFECT
TRANSISTOR FOR SWITCHING
DESCRIPTION
The µ PA679TB is a switching device, which can be driven directly by a 2.
5 V power source.
The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 2.
5 V drive available • Low on-state resistance N-ch RDS(on)1 = 0.
57 Ω MAX.
(VGS = 4.
5 V, ID = 0.
30 A) RDS(on)3 = 0.
88 Ω MAX.
(VGS = 2.
5 V, ID = 0.
15 A) P-ch RDS(on)1 = 1.
45 Ω MAX.
(VGS = −4.
5 V, ID = −0.
20 A) RDS(on)3 = 2.
98 Ω MAX.
(VGS = −2.
5 V, ID = −0.
15 A) • Two MOS FET circuits in same size packa...