NPN SILICON HIGH FREQUENCY
TRANSISTOR e
DESCRIPTION:
The ASI BFT51 is Designed for High Frequency Amplifier Applications.
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BFT51F
PACKAGE STYLE TO- 126
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA 20 V 3.
0 W @ TC = 25 °C -65 °C to +175 °C -65 °C to +175 °C 20 K/W
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO ICES HFE ft Ccb CC IC = 10 mA IC = 10 mA
TC = 25 °C
TEST CONDITIONS
RBE = 100 Ω
IC = 5.
0 mA VCE = 10 V
IC = 1.
0 mA VCE = 5.
0 V VCE = 5.
0 V VCB = 5.
0 V VCB = 5.
0 V
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IC = 100 mA IC = 300 mA IC = 300 mA
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NONE
MINIMUM
10 19 20 3.
0
TYPICAL
MAXIMUM
UNITS
V V V V
100 40 50 f = 100 MHz f = 1.
0 ...