TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks.
The device uses dual power supplies (2.
7 V to 3.
6 V for VCC and 1.
65 V to 1.
95 V for VCCQ ).
The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments.
The Erase operation is implemented i...

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