Part Number
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TC58DAM72F1FT00 |
Manufacturer
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Toshiba |
Description
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(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
Published
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Jan 14, 2006 |
Detailed Description
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TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILIC...
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Datasheet
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TC58DAM72F1FT00
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Overview
TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E2PROM DESCRIPTION
The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks.
The device uses dual power supplies (2.
7 V to 3.
6 V for VCC and 1.
65 V to 1.
95 V for VCCQ ).
The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments.
The Erase operation is implemented i...
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