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MRF21030LSR3

Part Number MRF21030LSR3
Manufacturer Motorola
Description RF Power Field Effect Transistors
Published Jan 16, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET ...
Datasheet MRF21030LSR3





Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.
0 to 2.
2 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.
096 MHz, 28 Volts Output Power — 3.
5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
11 GH...






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