Power
Transistor Arrays
PUA3117 (PU3117)
Silicon
NPN triple diffusion planar type
For power amplification and switching
20.
2±0.
3
Unit: mm
4.
0±0.
2
■ Features
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE •
NPN 3 elements
9.
5±0.
2 1.
65±0.
2 8.
0±0.
2
0.
8±0.
25 Solder Dip 5.
3±0.
5 4.
4±0.
5 0.
5±0.
15 1.
0±0.
25 2.
54±0.
2 7 × 2.
57 = 17.
78±0.
25 C 1.
5±0.
5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj...