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C30921E

(C309xxx) Silicon Avalanche Photodiodes

Description

Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail”, the responsivity of the...


PerkinElmer Optoelectronics

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