Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.
This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.
Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz.
The detector chip is hermetically-sealed behind a flat glass window in a modified TO18 package.
The useful diameter of the photosensitive surface is 0.
5 mm.
PerkinElmer Type C30921E utilizes the same silicon detector chip as the C30902E, but in a package containing a ligh...

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