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Part Number
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FDM606P |
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Manufacturer
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Fairchild Semiconductor |
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Description
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P-Channel 1.8V Logic Level Power Trench MOSFET |
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Published
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Jan 27, 2006 |
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Detailed Description
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FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is...
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Datasheet
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FDM606P
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Overview
FDM606P
July 2002
FDM606P
P-Channel 1.
8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications.
Features
• Fast switching • rDS(ON) = 0.
026Ω (Typ), VGS = -4.
5V • rDS(ON) = 0.
033Ω (Typ), VGS = -2.
5V • rDS(ON) = 0.
052Ω (Typ), VGS = -1.
8V
Applications
• Load switch • Battery charge • Battery disconnect circuits D
Bottomview 3 X 2 (8 Lead) SinglePad ShortPin
D G
D
D
1 2 8 7 6 5
1
D D D
3 4
...
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