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2SB863

Part Number 2SB863
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Feb 1, 2006
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE 1 o POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SD1148 . Recommend f...
Datasheet 2SB863




Overview
: SILICON PNP TRIPLE DIFFUSED TYPE 1 o POWER AMPLIFIER APPLICATIONS.
FEATURES .
Complementary to 2SD1148 .
Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm 15.
9MAX.
0&2±O.
2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VeBO IC IB PC Ti T stg RATING -140 -140 -5 -10 -1 100 150 -55-150 UNIT 545±0.
2 X cicJ + ff^^t 1.
BASE 2.
collector Cheat sink) 3l EMITTER JEDEC TOSHIBA 2-16B1A Weight : 4.
6g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector...






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