Advanced Power MOSFET w w w .
D t a FEATURES h S a t e e 4U .
m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.
8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 700V Low RDS(ON) : 1.
552 Ω (Typ.
) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Tot...

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