CMOS LSI m LE25FV101T o .
c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S Featuresa t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.
3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D .
Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max.
) w Low Active Current (Read): 25 mA (Max.
) End of Write Detection: Status Register Read 4 Preliminary Specifications Standby Current: 20 µA (Max.
) Serial Peripheral Interface (S.
P.
I.
) mode 0.
Product Description The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable s...

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