S amHop Microelectronics C orp.
h N-C hannel ES nhancement Mode Field E ffect
Transistor a t a P R ODUC T S UMMAR Y D .
I V w R w w
DS S D
ee
U 4 t
m o .
c
S T U/D1955NL
Arp,12 2005 ver1.
2
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
55 @ V G S = 10V 80 @ V G S = 4.
5V
R ugged and reliable.
55V
10A
TO-252 and TO-251 P ackage.
D G S
G D
S
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S t...