Part Number
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B9NC60 |
Manufacturer
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ST Microelectronics |
Description
|
STB9NC60 |
Published
|
Feb 23, 2006 |
Detailed Description
|
N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™II MOSFET
TYPE STB9NC60 STB9NC60-1 com
s s s s s
STB...
|
Datasheet
|
B9NC60
|
Overview
N-CHANNEL 600V - 0.
6Ω - 9A - D2PAK/I2PAK PowerMesh™II MOSFET
TYPE STB9NC60 STB9NC60-1 com
s s s s s
STB9NC60 STB9NC60-1
VDSS 600 V 600 V
RDS(on) 0.
75 Ω 0.
75 Ω
ID 9.
0 A 9.
0 A
TYPICAL RDS(on) = 0.
6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1 3 12
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-A...
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