STP50NE10
N-channel 100V - 0.
021Ω - 50A TO-220 STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STP50NE10
100V
0.
027Ω 50A
)■ Exceptional high dv/dt capability t(s■ 100% avalanche tested c■ Low gate charge at 100 oC du■ Application oriented characterization Pro t(s)Description lete ucThis Power MOSFET is the latest development of dSTMicroelectronis unique "Single Feature Size™" so rostrip-based process.
The resulting
transistor b Pshows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
- O teless critical alignment steps therefore a ) leremarkable manufacturing reproducibility.
ct(s bsoApplications du - O■ Switching application
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