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STP50NE10L

Part Number STP50NE10L
Manufacturer ST Microelectronics
Description N-Channel Enhancement Mode Power MOS Transistor
Published Feb 28, 2006
Detailed Description ® STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET™ POWER MOSFET TYPE VDSS RDS(on) STP50NE10L 100 V 0.02...
Datasheet STP50NE10L





Overview
® STP50NE10L N - CHANNEL 100V - 0.
020Ω - 50A TO-220 STripFET™ POWER MOSFET TYPE VDSS RDS(on) STP50NE10L 100 V 0.
025 Ω s TYPICAL RDS(on) = 0.
020 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED CHARACTERIZATION ID 50 A DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS...






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