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Part Number
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MBN1200GS12AW |
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Manufacturer
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Hitachi |
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Description
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Silicon N-Channel IGBT |
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Published
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Mar 3, 2006 |
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Detailed Description
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IGBT MODU ODULE
MBN1200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
130 110 4- φ 6.5
Unit in mm
2-M4
19.5 27.5
FEAT...
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Datasheet
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MBN1200GS12AW
|
Overview
IGBT MODU ODULE
MBN1200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
130 110 4- φ 6.
5
Unit in mm
2-M4
19.
5 27.
5
FEAT EATURES RES * High speed and low saturation voltage.
* low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
E
110
C
G
46.
75
E
13
+1 37 -0.
5
30
36
19
2-M8
E E
Weight: 1,300 (g)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
No...
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