Part Number
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TC55V8512J |
Manufacturer
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Toshiba |
Description
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(TC55V8512J/FT) 8-Bit CMOS SRAM |
Published
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Mar 23, 2006 |
Detailed Description
|
TC55V8512J/FT-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT CMOS STATIC RAM DES...
|
Datasheet
|
TC55V8512J
|
Overview
TC55V8512J/FT-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION
The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
This device is well suited to cache memory applications where high-speed access and high-speed storage are required.
All inputs and outputs are directly LVTTL compatible.
The TC55V8512J/FT i...
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