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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect
Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz.
The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Guaranteed Performance at 175 MHz, 50 V: Output Power — 300 W Gain — 14 dB (16 dB Typ) Efficiency — 50%
300 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET
ARCHIVE INFORMATION
• Low Thermal Resistance — 0.
35°C/W • Ruggedness Tested at Rated Output Po...