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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect
Transistors
Designed for broadband commercial and industrial applications with frequencies to 520 MHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.
5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.
5 Volts Output Power — 35 Watts Power Gain — 10.
0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.
6 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters ...